Ferroelectric memory

ABSTRACT

A ferroelectric memory has a plurality of memory cells each having a transistor and a ferroelectric capacitor arranged in a matrix. Plate lines run in the word line direction above the ferroelectric capacitors of memory cells adjacent to each other in the word line direction among the plurality of memory cells. Bit line contacts each for connecting a bit line and an active region of the transistor are placed in regions between the plate lines adjacent to each other in the bit line direction and between the ferroelectric capacitors adjacent to each other in the word line direction. Cuts are formed at positions of the plate lines near the bit line contacts. The active regions of the transistors of the plurality of memory cells extend in directions intersecting with the word line direction and the bit line direction.

This application is a divisional of application Ser. No. 09/988,817filed Nov. 20, 2001 now U.S. Pat. No. 6,784,468.

BACKGROUND OF THE INVENTION

The present invention relates to a ferroelectric memory in which aplurality of memory cells each having a transistor and a ferroelectriccapacitor are arranged in a matrix.

FIG. 25 shows a circuit configuration of a ferroelectric memory commonto first and second conventional examples and embodiments of the presentinvention. As shown in FIG. 25, a ferroelectric memory cell is of aone-transistor one-capacitor type having one transistor and oneferroelectric capacitor. A gate electrode of the transistor of theferroelectric memory cell is connected to a word line and a drainelectrode of the transistor is connected to a bit line. One electrode ofthe capacitor of the ferroelectric memory cell is connected to a plateline and the other electrode of the capacitor is connected to a sourceelectrode of the transistor. Thus, the ferroelectric memory cell iscontrolled by signals applied to the plate line, the word line and thebit line.

FIRST CONVENTIONAL EXAMPLE

Hereinafter, a ferroelectric memory of the first conventional examplewill be described with reference to FIGS. 26, 27 and 28.

FIGS. 26 and 27 show a layout of a ferroelectric memory cell array inthe first conventional example, and FIG. 28 shows a cross-sectionalstructure taken along line D—D of FIGS. 26 and 27. Note that FIG. 27 isa view showing only active regions, word lines, bit line contacts andstorage node contacts taken from the layout of FIG. 26.

Referring to FIGS. 26, 27 and 28, the reference numerals 11 a, 11 b, 11c and 11 d denote plate lines constructed of upper electrodes offerroelectric capacitors. The reference numerals 12 a, 12 b, 12 c and 12d denote word lines made of polycrystalline silicon constructed of gateelectrodes of access transistors. The reference numerals 13 a, 13 b, 13c and 13 d denote bit lines made of aluminum interconnections. Thereference numerals 14 a, 14 b, 14 c and 14 d denote storage nodes offerroelectric memory cells, each constructed of a lower electrode of theferroelectric capacitor. The reference numeral 18 denotes a one-bitferroelectric memory cell of the one-transistor one-capacitor type, andthe reference numeral 19 denotes a transistor constituting theferroelectric memory cell 18. The reference numeral 15 denotes storagenode contacts connecting the storage nodes 14 a, 14 b, 14 c and 14 d andactive regions 16 of the transistors 19, and the reference numeral 17denotes bit line contacts connecting the bit lines 13 a, 13 b, 13 c and13 d and the active regions 16 of the transistors 19.

Referring to FIG. 26, the reference code a1 denotes the firstinter-plate distance between the adjacent plate lines 11 a and 11 b withthe bit line contacts 17 therebetween, b1 denotes the line width of theplate lines 11 a and 11 b including the storage nodes 14 a, and c1denotes the second inter-plate distance between the adjacent plate lines11 b and 11 c without the bit line contacts 17 therebetween.

As shown in FIG. 26, the storage node contact 15 and the bit linecontact 17 are placed at the shortest distance from each other via theactive region 16.

SECOND CONVENTIONAL EXAMPLE

Hereinafter, a ferroelectric memory of the second conventional examplewill be described with reference to FIGS. 29, 30 and 31.

FIGS. 29 and 30 show a layout of a ferroelectric memory cell array inthe second conventional example, and FIG. 31 shows a cross-sectionalstructure taken along line E—E of FIGS. 29 and 30. Note that FIG. 30 isa view showing only active regions, word lines, bit line contacts andstorage node contacts taken from the layout of FIG. 29.

Referring to FIGS. 29, 30 and 31, the reference numerals 21 a, 21 b, 21c and 21 d denote plate lines constructed of upper electrodes offerroelectric capacitors. The reference numerals 22 a, 22 b, 22 c and 22d denote word lines made of polycrystalline silicon constructed of gateelectrodes of access transistors. The reference numerals 23 a, 23 b, 23c and 23 d denote bit lines made of aluminum interconnections. Thereference numerals 24 a, 24 b, 24 c and 24 d denote storage nodes offerroelectric memory cells, each constructed of a lower electrode of theferroelectric capacitor. The reference numeral 28 denotes a one-bitferroelectric memory cell composed of one transistor and one capacitor,and the reference numeral 29 denotes the transistor constituting theferroelectric memory cell 28. The reference numeral 25 denotes storagenode contacts connecting the storage nodes 24 a, 24 b, 24 c and 24 d andactive regions 26 of the transistors 29, and the reference numeral 27denotes bit line contacts connecting the bit lines 23 a, 23 b, 23 c and23 d and the active regions 26 of the transistors 29.

Referring to FIG. 29, the reference code a2 denotes the firstinter-plate distance between the adjacent plate lines 21 a and 21 b withthe bit line contacts 27 therebetween, b1 denotes the line width of theplate lines 21 a and 21 b including the storage nodes 24 a, and c1denotes the second inter-plate distance between the adjacent plate lines21 b and 21 c without the bit line contacts 17 therebetween. Thereference code d denotes the distance between one side edge of the wordline 22 a and the center of the bit line contact 27, e denotes the linewidth of the word line 22 a, and f denotes the distance between theother side edge of the word line 22 a and the center of the storage nodecontact 25. The first inter-plate distance a2 in the second conventionalexample is not the shortest distance obtainable by machining the platelines 21 a and 21 b.

The distance between the storage node contact 25 and the bit linecontact 27 is set to be the shortest via the active region 26, which isthe sum of the line width e of the word line 22 a, the distance dbetween one side edge of the word line 22 a and the center of the bitline contact 27, and the distance f between the other side edge of theword line 22 a and the center of the storage node contact 25.

(Problems of the First Conventional Example)

In the first conventional example, the length L11 of the ferroelectricmemory cell 18 in the bit line direction satisfies L11=a1/2+b1+c1/2.

Therefore, the area S11 of the ferroelectric memory cell 18 isrepresented byS11=L11×W11=(a1/2+b1+c1/2)×W11wherein W11 is the length of the ferroelectric memory cell 18 in theword line direction.

In general, a predetermined space is required between the edge of theplate line 11 a, 11 b, 11 c or 11 d on the side of the bit line contactsand the bit line contacts for prevention of short-circuitingtherebetween. For this reason, the first inter-plate distance a1 betweenthe adjacent plate lines 11 a and 11 b with the bit line contacts 17therebetween is greater than the second inter-plate distance c1 betweenthe adjacent plate lines 11 b and 11 c without the bit line contacts 17therebetween, that is, a1>c1.

Therefore, in the first conventional example, the area S11 of theferroelectric memory cell 18 disadvantageously increases compared withthe case in which all the inter-plate distances are equal to the secondinter-plate distance c1, that is, a1=c1.

In addition, in the first conventional example, in order to drive theplate line 11 a for read/write of data from/in the ferroelectric memorycell 18, all of the bit lines 13 a, 13 b, 13 c and 13 d connected to theplate line 11 a via the word line 12 a are used simultaneously. In thisoccasion, since the bit lines 13 a, 13 b, 13 c and 13 d are adjacent toeach other, noise is generated due to the capacitance existing betweenthe bit lines, and this may easily cause a malfunction.

(Problems of the Second Conventional Example)

In the second conventional example, the length L12 of the ferroelectricmemory cell 28 in the bit line direction satisfies L12=d+e+f+b1/2+c1/2.

Since the minimum value of the first inter-plate distance a2 between theadjacent plate lines 21 a and 21 b with the bit line contacts 27therebetween is equal to the first inter-plate distance a1 in the firstconventional example, the following relationship is satisfied.d+e+f=a2/1+b1/2>a1/2+b1/2

From this relationship and the relationship a1>c1 described in the firstconventional example, the following relationship is satisfied.d+e+f=a2/1+b1/2>c1/2+b1/2.

As a recent tendency, the operating voltage has been increasingly madelower with achievement of finer semiconductor devices. Ferroelectriccapacitors however fail to operate sufficiently with a low voltage.Therefore, a voltage higher than the operating voltage for thesurrounding circuits must be applied to the ferroelectric capacitors. Inconsideration of this, as transistors constituting ferroelectric memorycells, it is necessary to use transistors having a larger gate lengthand operating with a. higher voltage, compared with transistors for thesurrounding circuits.

However, in the second conventional example, if the gate length (theline width e of the word line 22 a) is made large, the area of theferroelectric memory cell 28 and thus the area of the ferroelectricmemory cell array disadvantageously increase.

SUMMARY OF THE INVENTION

In view of the above, a first object of the present invention isreducing the area of ferroelectric memory cells, and the second objectis preventing the area of ferroelectric memory cells from increasingeven when the gate length of transistors is made large.

To attain the first object, the first ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein plate lines run in the word line directionabove the ferroelectric capacitors of memory cells adjacent to eachother in the word line direction among the plurality of memory cells,bit. line contacts each for connecting a bit line and an active regionof the transistor are placed in regions between the plate lines adjacentto each other in the bit line direction and between the ferroelectriccapacitors adjacent to each other in the word line direction, cutportions are formed at positions of the plate lines near the bit linecontacts, and the active regions of the transistors of the plurality ofmemory cells extend in directions intersecting with the word linedirection and the bit line direction.

According to the first ferroelectric memory, cut portions are formed atpositions of the plate lines near the bit line contacts, and the activeregions of the transistors extend in directions intersecting with theword line direction and the bit line direction. Therefore, since thelength of the memory cells in the bit line direction can be made small,the area of the memory cell and thus the area of the memory cell arraycan be reduced, compared with the first conventional example.

To attain the first object, the second ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein ferroelectric capacitors of one set ofmemory cells adjacent to each other in the word line direction among theplurality of memory cells are placed at positions offset from each otherin the bit line direction, a word line is placed in common for thetransistors of the set of memory cells, a plate line is placed in commonfor the ferroelectric capacitors of the set of memory cells, and bitline contacts each for connecting a bit line and an active region of thetransistor are placed between the plate lines adjacent to each other ina bit line direction.

According to the second ferroelectric memory, ferroelectric capacitorsof one set of memory cells adjacent to each other in the word linedirection are placed at positions offset from each other in the bit linedirection. Therefore, the length of the memory cell in the word linedirection is greatly reduced compared with the first conventionalexample. In addition, a plate line is placed in common for theferroelectric capacitors of the set of memory cells, and bit linecontacts are placed between the plate lines. Therefore, the length ofthe memory cell in the bit line direction increases only by a ratesmaller than the reciprocal of the rate of reduction of the length ofthe memory cell in the word line direction, with respect to the firstconventional example. Thus, the area of the memory cell and thus thearea of the memory cell array can be reduced, compared with the firstconventional example.

To attain the first object, the third ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein ferroelectric capacitors of one set ofmemory cells adjacent to each other in the word line direction among theplurality of memory cells are placed at positions offset from each otherin the bit line direction, a word line is placed in common for thetransistors of the set of memory cells, plate lines are placedseparately for the respective ferroelectric capacitors of the set ofmemory cells, and bit line contacts each for connecting a bit line andan active region of the transistor are placed between plate line groupseach composed of the plurality of plate lines corresponding to the setof memory cells.

According to the third ferroelectric memory, ferroelectric capacitors ofone set of memory cells adjacent to each other in the word linedirection are placed at positions offset from each other in the bit linedirection. Therefore, the length of the memory cell in the word linedirection is greatly reduced compared with the first conventionalexample. In addition, bit line contacts are placed between plate linegroups each composed of the plurality of plate lines corresponding tothe set of memory cells. Therefore, the length of the memory cell in thebit line direction increases only by a rate smaller than the reciprocalof the rate of reduction of the length of the memory cell in the wordline direction, with respect to the first conventional example. Thus,the area of the memory cell and thus the area of the memory cell arraycan be reduced, compared with the first conventional example.

In the third ferroelectric memory, plate lines are placed separately forthe respective ferroelectric capacitors of the set of memory cells.Therefore, although the length of the memory cell in the bit linedirection is larger compared with the second ferroelectric memory, thebit lines for sending signals to the ferroelectric capacitors of the setof memory cells do not share the same plate line. This preventsgeneration of noise due to the capacitance existing between the bitlines, and thus prevents occurrence of a malfunction due to noise.

To attain the first object, the fourth ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein ferroelectric capacitors of one set ofmemory cells adjacent to each other in the word line direction among theplurality of memory cells are placed at positions offset from each otherin the bit line direction, a plate line is placed in common for theferroelectric capacitors of the set of memory cells, and bit linecontacts each for connecting a bit line and an active region of thetransistor are placed on both sides of the plate line in the bit linedirection.

According to the fourth ferroelectric memory, ferroelectric capacitorsof one set of memory cells adjacent to each other in the word linedirection are placed at positions offset from each other in the bit linedirection. Therefore, the length of the memory cell in the word linedirection is greatly reduced compared with the first conventionalexample. In addition, a plate line is placed in common for theferroelectric capacitors of the set of memory cells, and bit linecontacts are placed on both sides of the plate line in the bit linedirection. Therefore, the length of the memory cell in the bit linedirection increases only by a rate smaller than the reciprocal of therate of reduction of the length of the memory cell in the word linedirection, with respect to the first conventional example. Thus, thearea of the memory cell and thus the area of the memory cell array canbe reduced, compared with the first conventional example.

To attain the second object, the fifth ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein active regions of the transistors of theplurality of memory cells extend through between the ferroelectriccapacitors in the bit line direction, and word lines include: gateelectrodes having a relatively large width formed above portions of theactive regions extending through between the ferroelectric capacitors inthe bit line direction; and interconnections of the ferroelectriccapacitors having a relatively small width and extending in the bit linedirection.

According to the fifth ferroelectric memory, word lines include: gateelectrodes having a relatively large width formed above portions of theactive regions extending through between the ferroelectric capacitors inthe bit line direction; and interconnections of the ferroelectriccapacitors having a relatively small width and extending in the bit linedirection. Therefore, it is possible to form the word lines so that boththe gate electrodes and the interconnections of the word lines do notprotrude from the regions of the plate lines running in the word linedirection even when the gate length of the transistors is set equal tothe gate length of the transistors in the second conventional example.Therefore, since the length of the memory cell in the bit line directioncan be made small, the area of the memory cell and thus the area of thememory cell array can be reduced, compared with the second conventionalexample.

To attain the second object, the sixth ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein ferroelectric capacitors adjacent to eachother in the bit line direction with a bit line contact therebetweenamong a plurality of ferroelectric capacitors constituting the pluralityof memory cells are placed not to be offset from each other in the wordline direction, while ferroelectric capacitors adjacent to each other inthe bit line direction without a bit line contact therebetween among theplurality of ferroelectric capacitors constituting the plurality ofmemory cells are placed at positions offset from each other in the wordline direction, active regions of the transistors of the plurality ofmemory cells extend through in the bit line direction between theferroelectric capacitors adjacent to each other in the word linedirection, and word lines include: gate electrodes having a relativelylarge width formed above the active regions; and interconnections of theferroelectric capacitors having a relatively small width and extendingin the bit line direction.

According to the fifth ferroelectric memory, word lines include: gateelectrodes having a relatively large width formed above the activeregions; and interconnections of the ferroelectric capacitors having arelatively small width and extending in the bit line direction.Therefore, it is possible to form the word lines so that both the gateelectrodes and the interconnections of the word lines do not protrudefrom the regions of the plate lines running in the word line directioneven when the gate length of the transistors is set equal to the gatelength of the transistors in the second conventional example. Therefore,since the length of the memory cell in the bit line direction can bemade small, the area of the memory cell and thus the area of the memorycell array can be reduced, compared with the second conventionalexample.

To attain the second object, the seventh ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein ferroelectric capacitors of a pair ofmemory cells adjacent to each other in the word line direction among theplurality of memory cells are placed at positions offset from each otherin the bit line direction, a plate line is placed in common for theferroelectric capacitors of the pair of memory cells, and a word line isplaced in common for the transistors of the pair of memory cells andformed between the ferroelectric capacitors of the pair of memory cells.

According to the seventh ferroelectric memory, a plate line and a wordline are placed in common for the ferroelectric capacitors of the pairof memory cells, and the word line is formed between the ferroelectriccapacitors of the pair of memory cells. Therefore, since the length ofthe memory cell in the bit line direction can be made small, the area ofthe memory cell and thus the area of the memory cell array can bereduced, compared with the second conventional example, even when thegate length of the transistors is set equal to the gate length of thetransistors in the second conventional example.

In the seventh ferroelectric memory, the line width of the word line ispreferably set equal to or smaller than the distance between theferroelectric capacitors of the pair of memory cells.

By the above setting, the length of the memory cell in the bit linedirection can be made further small, and therefore the area of thememory cell and thus the area of the memory cell array can be furtherreduced.

To attain the second object, the eighth ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein ferroelectric capacitors of pairs ofmemory cells adjacent to each other in the word line direction among theplurality of memory cells are placed at positions offset from each otherin the bit line direction, active regions of the transistors of ones ofthe pairs of memory cells extend through between the ferroelectriccapacitors of the others of the pairs of memory cells in the bit linedirection, intersecting with a plate line for the other memory cells,first word lines are provided for the transistors of the ones of thepairs of memory cells, while second word lines are provided for thetransistors of the other memory cells, and the second word lines arenarrowed at portions intersecting with the active regions of thetransistors of the ones of the pairs of memory cells to a degree thatthe active regions are prevented from being turned to an OFF state.

According to the eighth ferroelectric memory, the second word lines arenarrowed at portions intersecting with the active regions of thetransistors of the ones of the pairs of memory cells to a degree thatthe active regions are prevented from being turned to an OFF state.Therefore, since the length of the memory cell in the bit line directioncan be made small, the area of the memory cell and thus the area of thememory cell array can be reduced, compared with the second conventionalexample, even when the gate length of the transistors is set equal tothe gate length of the transistors in the second conventional example.

To attain the second object, the ninth ferroelectric memory of thepresent invention is a ferroelectric memory in which a plurality ofmemory cells each having a transistor and a ferroelectric capacitor arearranged in a matrix, wherein bit lines are composed of active regionsrunning through in the bit line direction between the ferroelectriccapacitors of pairs of memory cells adjacent to each other in the wordline direction among the plurality of memory cells, and providedintegrally with active regions of the transistors of the plurality ofmemory cells, and word lines include: interconnections having a smallwidth formed above the bit lines to prevent the bit lines from beingturned to an OFF state; and gate electrodes having a width larger thanthe interconnections formed above the active regions of the transistors.

According to the ninth ferroelectric memory, word lines include:interconnections having a small width formed above the bit lines toprevent the bit lines from being turned to an OFF state; and gateelectrodes having a width larger than the interconnections formed abovethe active regions of the transistors. Therefore, since the length ofthe memory cell in the bit line direction can be made small, the area ofthe memory cell and thus the area of the memory cell array can bereduced, compared with the second conventional example, even when thegate length of the transistors is set equal to the gate length of thetransistors in the second conventional example.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a layout of a ferroelectric memory of the first embodiment.

FIG. 2 is a layout of the ferroelectric memory of the first embodiment.

FIG. 3 is a cross-sectional view of the ferroelectric memory of thefirst embodiment, taken long line A—A of FIGS. 1 and 2.

FIG. 4 is a layout of a ferroelectric memory of a modification of thefirst embodiment.

FIG. 5 is a layout of a ferroelectric memory of the second embodiment.

FIG. 6 is a layout of the ferroelectric memory of the second embodiment.

FIG. 7 is a layout of a ferroelectric memory of the third embodiment.

FIG. 8 is a layout of the ferroelectric memory of the third embodiment.

FIG. 9 is a layout of a ferroelectric memory of the fourth embodiment.

FIG. 10 is a layout of the ferroelectric memory of the fourthembodiment.

FIG. 11 is a layout of a ferroelectric memory of a modification of thefourth embodiment.

FIG. 12 is a layout of a ferroelectric memory of the fifth embodiment.

FIG. 13 is a layout of the ferroelectric memory of the fifth embodiment.

FIG. 14 is a cross-sectional view of the ferroelectric memory of thefifth embodiment, taken long line B—B of FIGS. 13 and 14.

FIG. 15 is a layout of a ferroelectric memory of the sixth embodiment.

FIG. 16 is a layout of the ferroelectric memory of the sixth embodiment.

FIG. 17 is a layout of the ferroelectric memory of the sixth embodiment.

FIG. 18 is a layout of a ferroelectric memory of the seventh embodiment.

FIG. 19 is a layout of the ferroelectric memory of the seventhembodiment.

FIG. 20 is a layout of a ferroelectric memory of the eighth embodiment.

FIG. 21 is a layout of the ferroelectric memory of the eighthembodiment.

FIG. 22 is a layout of a ferroelectric memory of the ninth embodiment.

FIG. 23 is a layout of the ferroelectric memory of the ninth embodiment.

FIG. 24 is a cross-sectional view of the ferroelectric memory of theninth embodiment, taken long line C—C of FIGS. 22 and 23.

FIG. 25 is a view showing a circuit configuration of a ferroelectricmemory common to the first and second conventional examples and thefirst to ninth embodiments of the present invention.

FIG. 26 is a layout of the ferroelectric memory of the firstconventional example.

FIG. 27 is a layout of the ferroelectric memory of the firstconventional example.

FIG. 28 is a cross-sectional view of the ferroelectric memory of thefirst conventional example, taken long line D—D of FIGS. 26 and 27.

FIG. 29 is a layout of the ferroelectric memory of the secondconventional example.

FIG. 30 is a layout of the ferroelectric memory of the secondconventional example.

FIG. 31 is a cross-sectional view of the ferroelectric memory of thesecond conventional example, taken long line E—E of FIGS. 29 and 30.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

(First Embodiment)

Hereinafter, a ferroelectric memory of the first embodiment will bedescribed with reference to FIGS. 1, 2 and 3.

FIGS. 1 and 2 show a layout of a ferroelectric memory cell array in thefirst embodiment, and FIG. 3 shows a cross-sectional structure takenalong line A—A of FIGS. 1 and 2. Note that FIG. 2 is a view showing onlyactive regions, word lines, bit line contacts and storage node contactstaken from the layout of FIG. 1.

Referring to FIGS. 1, 2 and 3, the reference numerals 101 a, 101 b, 101c and 101 d denote plate lines constructed of upper electrodes offerroelectric capacitors. The reference numerals 102 a, 102 b, 102 c and102 d denote word lines made of polycrystalline silicon constructed ofgate electrodes of access transistors. The reference numerals 103 a, 103b, 103 c and 103 d denote bit lines made of aluminum interconnections.The reference numerals 104 a, 104 b, 104 c and 104 d denote storagenodes of ferroelectric memory cells, each constructed of a lowerelectrode of the ferroelectric capacitor. The reference numeral 108denotes a one-bit ferroelectric memory cell of the one-transistorone-capacitor type, and the reference numeral 109 denotes a transistorconstituting the ferroelectric memory cell 108. The reference numeral105 a denotes a storage node contact connecting the storage node 104 aand an active region 106 of the transistor 109, and the referencenumeral 107 denotes a bit line contact connecting the bit line 103 a andthe active region 106 of the transistor 109.

Referring to FIG. 1, the reference code b1 denotes the line width of theplate lines 101 a to 101 d including the storage nodes 104 a to 104 d,c1 denotes the first inter-plate distance between the adjacent platelines 101 b and 101 c without the bit line contacts 107 therebetween,and c2 denotes the second inter-plate distance between the adjacentplate lines 101 a and 101 b with the bit line contacts 107 therebetween.

As shown in FIG. 1, the plate lines 101 a to 101 d run in the word linedirection (lateral direction as is viewed from FIG. 1) above the storagenodes 104 a to 104 d of the ferroelectric memory cells 108 adjacent toeach other in the word line direction.

The bit lines 103 a to 103 d run in the bit line direction (verticaldirection as is viewed from FIG. 1) between the storage nodes 104 a to104 d of the ferroelectric memory cells adjacent to each other in theword line direction.

The bit line contact 107 is placed at a position under the bit line 103a and between the adjacent plate lines (101 a and 101 b).

Cuts are formed at positions of the plate line 101 a near the bit linecontacts 107, to secure a predetermined gap lo between the side edge ofthe plate line 101 a and the bit line contacts 107.

The word line 102 a runs in a zigzag fashion navigating around thestorage node contacts 105 and the bit line contacts 107.

The active regions 106 of the transistors 109 are formed in an L shape,connecting a pair of storage node contacts 105 a and 105 b adjacent toeach other in the bit line direction and the bit line contact 107adjacent to the paired storage node contacts 105 a and 105 b. Thus, theactive regions 106 of the transistors 109 extend in directionsintersecting with the word line direction and the bit line direction.

In the first embodiment, the second inter-plate distance c2 is set to beequal to the first inter-plate distance c1.

Therefore, the length L1 of the ferroelectric memory cell 108 in the bitline direction satisfies L1=b1+c1.

In the first conventional example, the length L11 of the ferroelectricmemory cell 18 in the bit line direction satisfies L11=a1/2+b1+c1/2.Therefore, the difference in the length in the bit line directionbetween the ferroelectric memory cell in the first conventional exampleand that in the first embodiment, L11−L1, satisfies L11−L1=(a1−c1)/2.Since a1>c1 as described before, the relationship L11>L1 is established.

Thus, the area of the ferroelectric memory cell 108 in the firstembodiment is smaller than the area of the ferroelectric memory cell 18in the first conventional example.

(Modification of the First Embodiment)

FIG. 4 shows a layout of a ferroelectric memory cell array in amodification of the first embodiment.

In the first embodiment described above, the active regions 106 of thetransistors 109 is formed in an L shape, connecting the paired storagenode contacts 105 a and 105 b adjacent to each other in the bit linedirection and the bit line contact 107 adjacent to the paired storagenode contacts 105 a and 105 b. In this modification, the active regions106 of the transistors 109 are formed in a straight-line shape,connecting a pair of storage node contacts 105 a and 105 b adjacentdiagonally to each other and the bit line contact 107 located betweenthe paired storage node contacts 105 a and 105 b. Thus, the activeregions 106 of the transistors 109 extend in directions intersectingwith the bit line direction and the word line direction.

(Second Embodiment)

Hereinafter, a ferroelectric memory of the second embodiment will bedescribed with reference to FIGS. 5 and 6.

FIGS. 5 and 6 show a layout of a ferroelectric memory cell array in thesecond embodiment. Note that FIG. 2 is a view showing only activeregions, word lines, bit line contacts and storage node contacts takenfrom the layout of FIG. 5.

Referring to FIGS. 5 and 6, the reference numerals 201 a and 201 bdenote plate lines constructed of upper electrodes of ferroelectriccapacitors. The reference numerals 202 a and 202 b denote word linesmade of polycrystalline silicon constructed of gate electrodes of accesstransistors. The reference numerals 203 a, 203 b, 203 c, 203 d, 203 e,203 f, 203 g and 203 h denote bit lines made of aluminuminterconnections. The reference numerals 204 a, 204 b, 204 c, 204 d, 204e, 204 f, 204 g and 204 h denote storage nodes of ferroelectric memorycells, each constructed of a lower electrode of the ferroelectriccapacitor. The reference numeral 208 denotes a one-bit ferroelectricmemory cell of the one-transistor one-capacitor type, and the referencenumerals 209 a and 209 b denote transistors each constituting theferroelectric memory cell 208. The reference numeral 205 denotes storagenode contacts connecting the storage nodes 204 a to 204 h and activeregions 206 of the transistors 209 a and 209 b, and the referencenumeral 207 denotes bit line contacts connecting the bit lines 203 a to203 h and the active regions 206 of the transistors 209 a and 209 b.

Referring to FIG. 5, the reference code a1 denotes the distance betweenthe adjacent plate lines 201 a and 201 b, b1 denotes the line width ofthe plate lines 12 a and 12 b including the storage nodes in the firstconventional example, b2 denotes the line width of the plate lines 201 aand 201 b each including the storage nodes 204 a to 204 h arranged intwo lines, and c1 denotes the distance between each pair of the storagenodes (204 a and 204 b), (204 c and 204 d), (204 e and 204 f) and (204 gand 204 h) adjacent to each other in the bit line direction.

As shown in FIG. 5, the storage nodes (204 a and 204 b), (204 c and 204d), (204 e and 204 f) and (204 g and 204 h) of the ferroelectriccapacitors of the respective pairs of the ferroelectric memory cells 208adjacent to each other in the word line direction are placed atpositions offset from each other in the bit line direction.

The length of the ferroelectric memory cell 208 in the word linedirection is set at a half of that of the ferroelectric memory cell 18in the first conventional example.

The plate lines 201 a and 201 b are each provided in common for thestorage nodes 204 a to 204 h of the ferroelectric capacitors of thepairs of the memory cells placed at positions offset from each other inthe bit line direction.

The word lines 202 a and 202 b are each provided in common for thetransistors 209 a and 209 b corresponding to the storage nodes 204 a to204 h of the ferroelectric capacitors placed at positions offset fromeach other in the bit line direction.

The bit lines 203 a to 203 h run above the respective storage nodes 204a to 204 h.

The bit line contacts 207 are placed under the respective bit lines 203a to 203 h and between the adjacent plate lines 201 a and 201 b.

The plate lines 201 a and 201 b and the storage nodes 204 a to 204 h aremade of a same material, and thus the machinable minimum spacing is thesame. Therefore, the distance c1 between each pair of the storage nodes(204 a and 204 b), (204 c and 204 d), (204 e and 204 f) and (204 g and204 h) adjacent to each other in the bit line direction is equal to thesecond inter-plate distance c1 in the first conventional example.

In the second embodiment, the line width b2 of the plate lines 201 a and202 b including the storage nodes 204 a to 204 h arranged in two linessatisfies the relationship b2<2b1+c1.

Therefore, the length L2 of the ferroelectric memory cell 208 in the bitline direction satisfies the relationship:L2=a1/2+b2+c1/2<a1/2+2b1+c1+c1/2.

The length of the ferroelectric memory cell 208 in the second embodimentin the word line direction is a half of the length W11 of theferroelectric memory cell 18 in the first conventional example in theword line direction. Thus, the area S2 of the ferroelectric memory cell208 in the second embodiment satisfies the relationship:S2=(a1/2+b2+c1/2)×W11/2<(a1/2+2b1+c1+c1/2)×W11/2<(a1/2+b1+c1/2)×W11−(a1−c1)×W11/4.

As described before, the area S11 of the ferroelectric memory cell 18 inthe first conventional example satisfies S11=(a1/2+b1+c1/2)×W11, and thevalue of (a1−c1) is positive. This indicates that the area S2 of theferroelectric memory cell 208 in the second embodiment is smaller thanthe area S11 of the ferroelectric memory cell 18 in the firstconventional example.

(Third Embodiment)

Hereinafter, a ferroelectric memory of the third embodiment will bedescribed with reference to FIGS. 7 and 8.

FIGS. 7 and 8 show a layout of a ferroelectric memory cell array in thethird embodiment. Note that FIG. 8 is a view showing only activeregions, word lines, bit line contacts and storage node contacts takenfrom the layout of FIG. 7.

Referring to FIGS. 7 and 8, the reference numerals 301 a, 301 b, 301 cand 301 d denote plate lines constructed of upper electrodes offerroelectric capacitors. The reference numerals 302 a and 302 b denoteword lines made of polycrystalline silicon constructed of gateelectrodes of access transistors. The reference numerals 303 a, 303 b,303 c, 303 d, 303 e, 303 f, 303 g and 303 h denote bit lines made ofaluminum interconnections. The reference numerals 304 a, 304 b, 304 c,304 d, 304 e, 304 f, 304 g and 304 h denote storage nodes offerroelectric memory cells, each constructed of a lower electrode of theferroelectric capacitor. The reference numeral 308 denotes a one-bitferroelectric memory cell of the one-transistor one-capacitor type, andthe reference numerals 309 a and 309 b denote transistors eachconstituting the ferroelectric memory cell 308. The reference numeral305 denotes storage node contacts connecting the storage nodes 304 a to304 h and active regions 306 of the transistors 309 a and 309 b, and thereference numeral 307 denotes bit line contacts connecting the bit lines303 a to 303 h and the active regions 306 of the transistors 309 a and309 b.

Referring to FIG. 7, the reference code a1 denotes the first inter-platedistance between the plate lines 301 b and 301 c with the bit linecontacts 307 therebetween, b1 denotes the line width of the plate lines301a to 301 d including the storage nodes 304 a to 304 h, and c1 denotesthe second inter-plate distance between the plate lines 301 a and 301 bwithout the bit line contacts 307 therebetween.

As shown in FIG. 7, the storage nodes (304 a and 304 b), (304 c and 304d), (304 e and 304 f) and (304 g and 304 h) of the ferroelectriccapacitors of respective pairs of the ferroelectric memory cells 308adjacent to each other in the word line direction are placed atpositions offset from each other in the bit line direction.

The length of the ferroelectric memory cell 308 in the word linedirection is set at a half of that of the ferroelectric memory cell 18in the first conventional example.

The word lines 302 a and 302 b are each provided in common for thetransistors 309 a and 309 b corresponding to the storage nodes 304 a to304 h of the pairs of the ferroelectric capacitors placed at positionsoffset from each other in the bit line direction.

The plate lines 301 a and 301 b are respectively placed for the sets ofthe storage nodes (304 a, 304 c, 304 e and 304 g) and (304 b, 304 d, 304f and 304 h) in the same lines in the word line direction. That is, twoplate lines 301 a and 301 b are provided for each of the word lines 302a and 302 b.

In the third embodiment, the length L3 of the ferroelectric memory cell308 in the bit line direction satisfies the relationshipL3=(a1/2)+2b1+c1+(c1/2).

The length of the ferroelectric memory cell 308 in the third embodimentin the word line direction is a half of the length W11 of theferroelectric memory cell 18 in the first conventional example in theword line direction. Thus, the area S3 of the ferroelectric memory cell308 in the third embodiment satisfies the relationship:S3=(a1/2+2b2+c1+c1/2)×W11/2<(a1/2+b1+c1/2)×W11−(a1−c1) W11/4.

As described before, the area S11 of the ferroelectric memory cell 18 inthe first conventional example satisfies S11=(a1/2+b1+c1/2)×W11, and thevalue of (a1−c1) is positive. This indicates that the area S3 of theferroelectric memory cell 308 in the third embodiment is smaller thanthe area S11 of the ferroelectric memory cell 18 in the firstconventional example.

Moreover, in the third embodiment, only the plate line 301 a is drivenduring data read/write from/in the ferroelectric memory cell 308. Inthis case, the bit lines 303 a, 303 b, 303 c and 303 d, which are notadjacent to each other, are connected to the plate line 301 a via theword line 302 a. The bit line 303 a and the bit line 303 e adjacent tothe bit line 303 a, for example, do not share the same plate line.Therefore, occurrence of a malfunction due to noise is prevented.

(Fourth Embodiment)

Hereinafter, a ferroelectric memory of the fourth embodiment will bedescribed with reference to FIGS. 9 and 10.

FIGS. 9 and 10 show a layout of a ferroelectric memory cell array in thefourth embodiment. Note that FIG. 10 is a view showing only activeregions, word lines, bit line contacts and storage node contacts takenfrom the layout of FIG. 9.

Referring to FIGS. 9 and 10, the reference numeral 401 denotes a plateline constructed of upper electrodes of ferroelectric capacitors. Thereference numerals 402 a and 402 b denote word lines made ofpolycrystalline silicon constructed of gate electrodes of accesstransistors. The reference numerals 403 a, 403 b, 403 c, 403 d, 403 e,403 f, 403 g and 403 h denote bit lines made of aluminuminterconnections. The reference numerals 404 a, 404 b, 404 c, 404 d, 404e, 404 f, 404 g and 404 h denote storage nodes of ferroelectric memorycells, each constructed of a lower electrode of the ferroelectriccapacitor. The reference numeral 408 denotes a one-bit ferroelectricmemory cell of the one-transistor one-capacitor type, and the referencenumeral 409 denotes a transistor constituting the ferroelectric memorycell 408. The reference numeral 405 denotes storage node contactsconnecting the storage nodes 404 a to 404 h and active regions 406 ofthe transistors 409, and the reference numeral 407 denotes bit linecontacts connecting the bit lines 403 a to 403 h and the active regions406 of the transistors 409.

Referring to FIG. 9, the reference code a1 denotes the distance betweenthe adjacent plate lines 401 with the bit line contacts 407therebetween, b1 denotes the line width of the plate lines 11 a and 11 bincluding the storage nodes in the first conventional example, b2denotes the line width of the plate line 401 a, 402 b including thestorage nodes 404 a to 404 h arranged in two lines, and c1 denotes thedistance between each pair of the storage nodes (404 a and 404 b), (404c and 404 d), (404 e and 404 f) and (404 g and 404 h) adjacent to eachother in the bit line direction.

As shown in FIG. 9, the storage nodes (404 a and 404 b), (404 c and 404d), (404 e and 404 f) and (404 g and 404 h) of the ferroelectriccapacitors of respective pairs of the ferroelectric memory cells 408adjacent to each other in the word line direction are placed atpositions offset from each other in the bit line direction.

The length of the ferroelectric memory cell 408 in the word linedirection is set at a half of that of the ferroelectric memory cell 18in the first conventional example.

The plate line 401 is provided in common for the storage nodes 404 a to404 h of the ferroelectric capacitors of the pairs of the memory cellsplaced at positions offset from each other in the bit line direction.

The word lines 402 a and 402 b are respectively provided for the sets ofthe storage nodes (404 a, 404 c, 404 e and 404 g) and (404 b, 404 d, 404f and 404 h) in the same lines in the word line direction. That is, oneplate line 401 is provided for the two word lines 402 a and 402 b.

The bit lines 403 a to 403 h run above the respective storage nodes 404a to 404 h.

The bit line contacts 407 are placed under the bit lines 403 a to 403 hand between the adjacent plate lines 401.

The plate line 401 and the storage nodes 404 a to 404 h are made of asame material, and thus the machinable minimum spacing is the same.Therefore, the distance c1 between each pair of the storage nodes (404 aand 404 b), (404 c and 404 d), (404 e and 404 f) and (404 g and 404 h)adjacent to each other in the bit line direction is equal to the secondinter-plate distance c1 in the first conventional example.

In the fourth embodiment, the line width b2 of the plate line 401including the storage nodes 404 a to 404 h arranged in two linessatisfies the relationship b2<2b1+c1.

Therefore, the length L4 of the ferroelectric memory cell 408 in the bitline direction satisfies the relationship L4=a1+b2<a1+2b1+c1.

The length of the ferroelectric memory cell 408 in the fourth embodimentin the word line direction is a half of the length W11 of theferroelectric memory cell 18 in the first conventional example in theword line direction. Also, as described before, the area S11 of theferroelectric memory cell 18 in the first conventional example satisfiesS11=(a1/2+b1+c1/2)×W11. Thus, the area S4 of the ferroelectric memorycell 408 in the fourth embodiment satisfies the relationship:S4=(a1+2b1)×W11/2<(a1+2b1+c1)×W11/2<(a1/2+b1+c1/2)×W11=S11.

Therefore, the area S4 of the ferroelectric memory cell 408 in thefourth embodiment is smaller than the area S11 of the ferroelectricmemory cell 18 in the first conventional example.

(Modification of the Fourth Embodiment)

FIG. 11 shows a layout of a ferroelectric memory cell array of amodification of the fourth embodiment.

In this modification, as in the first embodiment, cut portions areformed at positions of the plate line 401 near the bit line contacts407, and the word lines 402 a and 402 b run in a zigzag fashionnavigating around the storage node contacts 405 and the bit linecontacts 407. The active regions 406 are formed in an L shape,connecting a pair of the storage node contacts 405 adjacent to eachother in the bit line direction and the bit line contact 407 adjacent tothe paired storage node contacts 105.

(Fifth Embodiment)

Hereinafter, a ferroelectric memory of the fifth embodiment will bedescribed with reference to FIGS. 12, 13 and 14.

FIGS. 12 and 13 show a layout of a ferroelectric memory cell array inthe fifth embodiment, and FIG. 14 shows a cross-sectional structuretaken along line B—B of FIGS. 12 and 13. Note that FIG. 13 is a viewshowing only active regions, word lines, bit line contacts and storagenode contacts taken from the layout of FIG. 12.

Referring to FIGS. 12, 13 and 14, the reference numerals 501 a, 501 b,501 c and 501 d denote plate lines constructed of upper electrodes offerroelectric capacitors. The reference numerals 502 a, 502 b, 502 c and502 d denote word lines made of polycrystalline silicon constructed ofgate electrodes of access transistors. The reference numerals 503 a, 503b, 503 c and 503 d denote bit lines made of aluminum interconnections.The reference numerals 504 a, 504 b, 504 c and 504 d denote storagenodes of ferroelectric memory cells, each constructed of a lowerelectrode of the ferroelectric capacitor. The reference numeral 508denotes a one-bit ferroelectric memory cell of the one-transistorone-capacitor type, and the reference numeral 509 denotes a transistorconstituting the ferroelectric memory cell 508. The reference numeral505 denotes storage node contacts connecting the storage nodes 504 a to504 d and active regions 506 of the transistors 509, and the referencenumeral 507 denotes bit line contacts connecting the bit lines 503 a to503 d and the active regions 506 of the transistors 509.

Referring to FIG. 12, the reference code a1 denotes the firstinter-plate distance between the adjacent plate lines 501 a and 501 bwith the bit line contacts 507 therebetween, b1 denotes the line widthof the plate lines 501 a to 501 d each including the storage nodes 504 ato 504 d, and c1 denotes the second inter-plate distance between theadjacent plate lines 501 b and 501 c without the bit line contacts 507therebetween.

As shown in FIG. 12, the plate lines 501 a to 501 d run in the word linedirection above the storage nodes 504 a to 504 d of the ferroelectricmemory cells adjacent to each other in the word line direction.

The bit lines 503 a to 503 d run between the storage nodes 504 a to 504d of the ferroelectric memory cells adjacent to each other in the wordline direction.

The bit line contacts 507 are placed at positions under the bit lines503 a to 503 d and between the plate lines (501 a and 501 b). and (501 cand 501 d) adjacent in the bit line direction.

The active regions 506 of the transistors 509 a and 509 b extend from apair of the storage node contacts 505 a and 505 b in the directions awayfrom each other, turn toward the bit line 503 a, and then extend underthe bit line 503 a, that is, extend through between the storage nodes.

Each of the word lines 502 a to 502 d has: gate electrodes having acomparatively large width formed above portions of the active regions506 extending through between the storage nodes 504 a to 504 d in thebit line direction; and interconnections having a comparatively smallwidth formed near the storage nodes 504 a to 504 d.

In the fifth embodiment, in which each of the word lines 502 a to 502 dhas: gate electrodes having a comparatively large width formed aboveportions of the active regions 506 extending through between the storagenodes 504 a to 504 d in the bit line direction; and interconnectionshaving a comparatively small width formed near the storage nodes 504 ato 504 d, it is possible to form the word lines 502 a to 502 d so thatthey do not protrude from the plate lines 501 a to 501 d even when thegate length of the transistor 509 is the same as that of the transistor29 in the second conventional example.

The length L5 of the ferroelectric memory cell 508 of the fifthembodiment in the bit line direction satisfies L5=a1/2+b1+c1/2.

The length L12 of the ferroelectric memory cell 28 in the secondconventional example in the bit line direction satisfiesL12=d+e+f+b1/2+c1/2. Therefore, L12−L5 =(d+e+f)−(a1/2+b1/2).

Since d+e+f=a2/2+b1/2>a1/2+b1/2 as described before, L12>L5.

Therefore, the area of the ferroelectric memory cell 508 in the fifthembodiment is smaller than the area of the ferroelectric memory cell 28in the second conventional example.

As the gate length (=e) of the transistor 509 is greater, the differencebetween the area of the ferroelectric memory cell 508 in the fifthembodiment and the area of the ferroelectric memory cell 28 in thesecond conventional example is greater.

(Sixth Embodiment)

Hereinafter, a ferroelectric memory of the sixth embodiment will bedescribed with reference to FIGS. 15, 16 and 17.

FIGS. 15 to 17 show a layout of a ferroelectric memory cell array in thesixth embodiment. Note that FIG. 16 is a view showing only plate lines,word lines, bit lines, storage nodes and bit line contacts taken fromthe layout of FIG. 15, and FIG. 17 is a view showing only activeregions, word lines, bit line contacts and storage node contacts takenfrom the layout of FIG. 15.

Referring to FIGS. 15 to 17, the reference numerals 601 a, 601 b, 601 cand 601 d denote plate lines constructed of upper electrodes offerroelectric capacitors. The reference numerals 602 a, 602 b, 602 c and602 d denote word lines made of polycrystalline silicon constructed ofgate electrodes of access transistors. The reference numerals 603 a, 603b, 603 c and 603 d denote bit lines made of aluminum interconnections.The reference numerals 604 a, 604 b, 604 c and 604 d denote storagenodes of ferroelectric memory cells, each constructed of a lowerelectrode of the ferroelectric capacitor. The reference numeral 608denotes a one-bit ferroelectric memory cell of the one-transistorone-capacitor type, and the reference numeral 609 denotes a transistorconstituting the ferroelectric memory cell 608. The reference numeral605 denotes a storage node contact connecting the storage node 604 a andan active region 606 of the transistor 609, and the reference numeral607 denotes a bit line contact connecting the bit line 603 a and theactive region 606 of the transistor 609.

Referring to FIGS. 15 and 16, the reference code a1 denotes the firstinter-plate distance between the adjacent plate lines (601 a and 601 b)and (601 c and 601 d) with the bit line contacts 607 therebetween, b1denotes the line width of the plate lines 601 a to 601 d each includingthe storage nodes 604 a to 604 d, and c1 denotes the second inter-platedistance between the adjacent plate lines 601 b and 601 c without thebit line contacts 607 therebetween.

As shown in FIG. 15, the storage nodes of the ferroelectric capacitorsof the ferroelectric memory cells (608 a and 608 b) adjacent to eachother in the bit line direction via the bit line contact 607 (thestorage node 604 a in the first line and the storage node 604 e in thefourth line) are placed not to be offset from each other in the wordline direction (to be aligned in the bit line direction). On thecontrary, the storage nodes of the ferroelectric capacitors of theferroelectric memory cells (608 a and 608 c, or 608 b and 608 d) sharingthe common bit line without the bit line contact 607 therebetween andlocated adjacent to each other (the storage node 604 a in the first lineand the storage node 604 f in the second line, or the storage node 604 gin the third line and the storage node 608 b in the fourth line) areplaced at positions offset from each other in the word line direction.

The length of the ferroelectric memory cell 608 in the word linedirection is set at a half of that of the ferroelectric memory cell 28of the second conventional example.

The bit line 603 a runs in the bit line direction, turns at a positionbetween the ferroelectric memory cells (608 a and 608 c) sharing thecommon bit line without the bit line contact 607 therebetween andlocated adjacent to each other to proceed in the word line direction,then runs in the bit line direction between the storage nodes of theferroelectric capacitors of the memory cells (608 a, and 608 b) adjacentto each other in the bit line direction via the bit line contact 607(the storage node 604 a in the first line and the storage node 608 b inthe fourth line), turns at a position between the storage nodes of theferroelectric capacitors of the memory cells (608 b and 608 d) sharingthe common bit line without the bit line contact 607 therebetween andlocated adjacent to each other (the storage node 604 g in the third lineand the storage node 608 b in the fourth line) to proceed in the wordline direction, and then runs in the bit line direction.

The active regions 606 extend between the pair of the storage nodessharing the bit line contact 607 and placed not to be offset from eachother in the word line direction (the storage nodes in the first lineand in the fourth line).

Therefore, the word line 602 b is operated when the plate line 601 a isdriven, while the word line 602 a is operated when the plate line 601 bis driven.

Each of the word lines 602 a to 602 d has: gate electrodes having acomparatively large width formed above the active regions 606; andinterconnections having a comparatively small width formed near thestorage nodes 604 a to 604 d.

In the sixth embodiment, in which the word line 602 b has: gateelectrodes having a comparatively large width formed above the activeregions 606; and interconnections having a comparatively small widthformed near the storage nodes 604 a to 604 d, it is possible to have thegate length of the transistor 609 equal to that of the transistor 29 inthe second conventional example only at the positions above the activeregions 606.

The length L6 of the ferroelectric memory cell 608 in the sixthembodiment in the bit line direction satisfies L6=a1+2b1+c1.

The length of the ferroelectric memory cell 608 in the sixth embodimentin the word line direction is a half of the length W12 of theferroelectric memory cell 28 in the second conventional example in theword line direction. Therefore, the area S6 of the ferroelectric memorycell 608 in the sixth embodiment satisfies

$\begin{matrix}{{S6} = {\left( {{a1} + {2{b1}} + {c1}} \right) \times {{W12}/2}}} \\{= {\left( {{{a1}/2} + {b1} + {{c1}/2}} \right) \times {{W12}.}}}\end{matrix}$

The area S12 of the ferroelectric memory cell 28 in the secondconventional example satisfies S12=(d+e+f+b1/2+c1/2)×W12.

Therefore, S12−S6={(d+e+f)−(a1/2+b1/2)}×W12.

As described in relation with the problems of the second conventionalexample, d+e+f=a2/2+b1/2>a1/2+b1/2. Therefore, S12>S6.

Thus, the area of the ferroelectric memory cell 608 in the sixthembodiment can be made smaller than the area of the ferroelectric memorycell 28 in the second conventional example.

As the gate length (=e) of the transistor 609 is greater, the differencebetween the area S6 of the ferroelectric memory cell 608 in the sixthembodiment and the area S12 of the ferroelectric memory cell 28 in thesecond conventional example is greater.

(Seventh Embodiment)

Hereinafter, a ferroelectric memory of the seventh embodiment will bedescribed with reference to FIGS. 18 and 19.

FIGS. 18 and 19 show a layout of a ferroelectric memory cell array inthe sixth embodiment. Note that FIG. 19 is a view showing only activeregions, word lines, bit line contacts and storage node contacts takenfrom the layout of FIG. 18.

Referring to FIGS. 18 and 19, the reference numeral 701 denotes a plateline constructed of upper electrodes of ferroelectric capacitors. Thereference numeral 702 denotes a word line made of polycrystallinesilicon constructed of gate electrodes of access transistors. Thereference numerals 703 a, 703 b, 703 c, 703 d, 703 e, 703 f, 703 g and703 h denote bit lines made of aluminum interconnections. The referencenumerals 704 a, 704 b, 704 c, 704 d, 704 e, 704 f, 704 g and 704 hdenote storage nodes of ferroelectric memory cells, each constructed ofa lower electrode of the ferroelectric capacitor. The reference numeral708 denotes a one-bit ferroelectric memory cell of the one-transistorone-capacitor type, and the reference numeral 709 denotes a transistorconstituting the ferroelectric memory cell 708. The reference numeral705 denotes storage node contacts connecting the storage nodes 704 a to704 h and active regions 706 of the transistors 709, and the referencenumeral 707 denotes bit line contacts connecting the bit lines 703 a to703 h and the active regions 706 of the transistors 709.

Referring to FIG. 18, the reference code a1 denotes the distance betweenthe adjacent plate lines 701 with the bit line contacts 707therebetween, b1 denotes the line width of the plate lines 21 a and 21 bincluding the storage nodes in the second conventional example, b2denotes the line width of the plate line 701 including the storage nodes704 a to 704 h arranged in two lines, and c1 denotes the distancebetween the adjacent plate lines 21 b and 21 c without the bit linecontacts 27 therebetween in the second conventional example.

As shown in FIG. 18, the plate line 701 is provided in common for thestorage nodes 704 a to 704 h of the ferroelectric capacitors in twolines (for example, the storage nodes 704 a, 704 c, 704 e and 704 g inthe second line, and the storage nodes 704 b, 704 d, 704 f and 704 h inthe third line).

Among the storage nodes 704 a to 704 h of the ferroelectric capacitorsin two lines sharing the plate line 701, the storage nodes 704 a, 704 c,704 e and 704 g in one line (for example, the second line) are placed atpositions offset is from the storage nodes 704 b, 704 d, 704 f and 704 hin the other line (for example, the third line) in the bit linedirection.

The length of the ferroelectric memory cell 708 in the word linedirection is set at a half of that of the ferroelectric memory cell 28of the second conventional example in the word line direction.

The word line 702 runs through between the two lines of the storagenodes sharing the plate line 701 (for example, between the storage nodes704 a, 704 c, 704 e and 704 g in the second line and the storage nodes704 b, 704 d, 704 f and 704 h in the third line), and is provided incommon for the transistors 709 corresponding to the ferroelectriccapacitors in the two lines sharing the plate line 701.

The bit lines 703 a to 703 h are provided for the respectiveferroelectric capacitors in the two lines sharing the plate line 701.The bit line contacts 707 are placed at positions under the bit lines703 a to 703 d and between the adjacent plate lines 701.

The plate line 701 and the storage nodes 704 a to 704 h are made of asame material, and thus the machinable minimum spacing is the same.Therefore, the distance c1 between the storage nodes 704 a, 704 c, 704 eand 704 g in one line (for example, the second line) and the storagenodes 704 b, 704 d, 704 f and 704 h in the other line (for example, thethird line) among the storage nodes 704 a to 704 h of the ferroelectriccapacitors in two lines sharing the plate line 701 is equal to thesecond inter-plate distance c1 in the second conventional example.

The line width of the word line 702, that is, the gate length of thetransistor 709 can be set to be roughly the same as the distance betweenthe storage nodes 704 a, 704 c, 704 e and 704 g in one line (forexample, the second line) and the storage nodes 704 b, 704 d, 704 f and704 h in the other line (for example, the third line) among the storagenodes 704 a to 704 h of the ferroelectric capacitors in two linessharing the plate line 701. Therefore, the area of the ferroelectricmemory cell 708 does not depend on the gate length of the transistor709. Thus, it is possible to increase the gate length of the transistor709 without influencing the area of the ferroelectric memory cell 708.

In the seventh embodiment, the line width b2 of the plate line 701including the storage nodes 704 a to 704 h in two lines satisfies therelationship b2<2b1+c1.

Therefore, the length L7 of the ferroelectric memory cell 708 in the bitline direction satisfies the relationship L7=a1+b2<a1+2b1+c1.

The length of the ferroelectric memory cell 708 in the seventhembodiment in the word line direction is set at a half of the length W12of the ferroelectric memory cell 28 in the second conventional examplein the word line direction. Thus, when the area of the ferroelectricmemory cell 28 is denoted by S12, the area S7 of the ferroelectricmemory cell 708 in the seventh embodiment satisfies the relationship:S7=(a1+b2)×W12/2<(a1+2b1+c1)×W12/2<(a1/2+b1+c1/2)×W12=S12.

Therefore, the area of the ferroelectric memory cell 708 in the seventhembodiment can-be smaller than the area of the ferroelectric memory cell28 in the second conventional example.

(Eighth Embodiment)

Hereinafter, a ferroelectric memory of the eighth embodiment will bedescribed with reference to FIGS. 20 and 21.

FIGS. 20 and 21 show a layout of a ferroelectric memory cell array inthe eighth embodiment. Note that FIG. 21 is a view showing only activeregions, word lines, bit line contacts and storage node contacts takenfrom the layout of FIG. 20.

Referring to FIGS. 20 and 21, the reference numerals 801 a, 801 b, 801 cand 801 d denote plate lines constructed of upper electrodes offerroelectric capacitors. The reference numerals 802 a and 802 d denotefirst word lines made of polycrystalline silicon constructed of gateelectrodes of access transistors, and the reference numerals 802 b and802 c is denote second word lines made of polycrystalline siliconconstructed of gate electrodes of access transistors. The referencenumerals 803 a, 803 b, 803 c, 803 d, 803 e, 803 f, 803 g and 803 hdenote bit lines made of aluminum interconnections. The referencenumerals 804 a, 804 b, 804 c, 804 d, 804 e, 804 f, 804 g and 804 hdenote storage nodes of ferroelectric memory cells, each constructed ofa lower electrode of the ferroelectric capacitor. The reference numerals808 a and 808 b denote one-bit ferroelectric memory cells of theone-transistor one-capacitor type, and the reference numerals 809 a and809 b denote transistors each constituting the ferroelectric memory cell808. The reference numeral 810 denotes a short-channel transistor. Thereference numerals 805 a and 805 b denote storage node contactsconnecting the storage nodes 804 a and 804 b and active regions 806 aand 806 b of the transistors 809 a and 809 b, respectively, and thereference numerals 807 a and 807 b denote bit line contacts connectingthe bit lines 803 a to 803 h and the active regions 806 a and 806 b ofthe transistors 809 a and 809 b.

Referring to FIG. 20, the reference code a2 denotes the firstinter-plate distance between the adjacent plate lines 801 b and 801 cwith the bit line contacts 807 therebetween, b1 denotes the line widthof the plate lines 801 a to 801 d including the storage nodes 804 a to804 h, and c1 denotes the second inter-plate distance between theadjacent plate lines 801 a and 801 b without the bit line contacts 807therebetween. The reference code d denotes the distance between one sideedge of the second word line 802 b and the center of the bit linecontacts 807 a and 807 b, e denotes the line width of the second wordline 802 b, and f denotes the distance between the other side edge ofthe second word line 802 a and the center of the storage node contact805 b. Note that the first inter-plate distance a2 is not the shortestdistance obtainable by machining of the plate lines 801 b and 801 c.

As shown in FIG. 20, the storage nodes 804 a and 804 b of theferroelectric capacitors of the ferroelectric memory cells 808 a and 808b adjacent to each other in the word line direction are placed atpositions offset from each other in the bit line direction.

The length of the ferroelectric memory cells 808 a and 808 b in the wordline direction is set at a half of that of the ferroelectric memory cell28 in the second conventional example in the word line direction.

The plate lines 801 a and 801 b are provided for the respective storagenodes 804 a and 804 b of the ferroelectric memory cells adjacent to eachother in the word line direction.

The active region 806 a of each transistor 809 a constituting theferroelectric memory cell 808 a out of the pairs of the ferroelectricmemory cells 808 a and 808 b adjacent to each other in the word linedirection extend through in the bit line direction between the storagenodes of the ferroelectric capacitors constituting the other adjacentferroelectric memory cells 808 b, intersecting with the plate line 801 bfor the ferroelectric memory cells 808 b. On the contrary, the activeregion 806 b of each transistor 809 b constituting the ferroelectricmemory cell 808 b does not intersect with the plate line 801 a for theferroelectric memory cells 808 a.

The first word line 802 a corresponds to the transistors 809 aconstituting the ferroelectric memory cells 808 a, and the second wordline 802 b corresponds to the transistors 809 b constituting theferroelectric memory cells 808 b.

The second word line 802 b is narrowed at portions intersecting with theactive regions 806 a of the transistors 809 a each constituting theferroelectric memory cell 808 a to a degree that the active regions 806a are prevented from being turned to the OFF state, thereby forming theshort-channel transistors 810.

Thus, the ferroelectric memory cell 808 a as one of each pair has thenormal transistor 809 a and the short-channel transistor 810. However,since the source-drain impedance of the short-channel transistor 810 islow, the influence of the short-channel transistor 810 on theferroelectric memory cell 808 a is negligible.

By using the short-channel transistor 810, the active region 806 aintersects with the second word line 802 b that is different from thefirst word line 802 a constituting the transistor 809 a connected withthe storage node 804 a of the ferroelectric memory cell 808 a.

The length L8 of the ferroelectric memory cells 808 a and 808 b in theeighth embodiment in the bit line direction satisfiesL8=d+e+f+b1/2+c1+b1+c1/2.

The length of the ferroelectric memory cells 808 a and 808 b in theeighth embodiment in the word line direction is a half of the length W12of the ferroelectric memory cell 28 in the second conventional examplein the word line direction. Therefore, the area S8 of the ferroelectricmemory cells 808 a and 808 b in the eighth embodiment satisfiesS8=(d+e+f+b1/2+c1+b1+c1/2)×W12/2.

Since d+e+f>b1/2+c1/2, the following relationship is satisfied.S8<(2d+2e+2f+b1+c1)×W12/2<(d+e+f+b1/2+c1/2)×W12=S12 (area of theferroelectric memory cell 28 in the second conventional example)

Thus, the area of the ferroelectric memory cells 808 a and 808 b in theeighth embodiment can be made smaller than the area of the ferroelectricmemory cell 28 in the second conventional example.

(Ninth Embodiment)

Hereinafter, a ferroelectric memory of the ninth embodiment will bedescribed with reference to FIGS. 22, 23 and 24.

FIGS. 22 and 23 show a layout of a ferroelectric memory cell array inthe ninth embodiment, and FIG. 24 shows a cross-sectional structuretaken along line C—C of FIGS. 22 and 23. Note that FIG. 23 is a viewshowing only active regions, word lines, bit line contacts and storagenode contacts taken from the layout of FIG. 22.

Referring to FIGS. 22, 23 and 24, the reference numerals 901 a, 901 b,901 c and 901 d denote plate lines constructed of upper electrodes offerroelectric capacitors. The reference numerals 902 a, 902 b and 902 cdenote word lines made of polycrystalline silicon constructed of gateelectrodes of access transistors. The reference numerals 903 a, 903 b,903 c and 903 d denote bit lines constructed of active regions. Thereference numerals 904 a, 904 b, 904 c and 904 d denote storage nodes offerroelectric memory cells, each constructed of a lower electrode of theferroelectric capacitor. The reference numeral 908 denotes a one-bitferroelectric memory cell of the one-transistor one-capacitor type, andthe reference numeral 909 denotes a transistor constituting theferroelectric memory cell 908. The reference numeral 905 denotes storagenode contacts connecting the storage nodes 904 a to 904 d and the bitlines 903 a to 903 d constructed of the active regions.

Referring to FIG. 22, the reference code b1 denotes the line width ofthe plate lines 901 a to 901 d including the storage nodes 904 a to 904d, and c1 denotes the distance between the adjacent plate lines 901 aand 901 b without bit line contacts therebetween.

The bit lines are formed integrally with the active regions of thetransistors 909 of the ferroelectric memory cells 908 lined in the bitline direction and also run through in the bit line direction betweenthe storage nodes 904 a to 904 d of the ferroelectric capacitors ofpairs of the ferroelectric memory cells 908 adjacent to each other inthe word line direction.

The word lines 902 a to 902 c are provided in common for theferroelectric memory cells 908 lined in the word line direction. Each ofthe word lines 902 a to 902 c has: interconnections formed above the bitlines 903 a to 903 d having a width narrow enough to prevent the bitlines 903 a to 903 d from being turned to the OFF state and; and gateelectrodes formed above the active regions of the transistors 909 havinga width wider than the narrow interconnections.

In the ninth embodiment, the bit lines 903 a to 903 d are constructed ofthe active regions. Therefore, unlike the case of the bit lines made ofaluminum interconnections, it is unnecessary to provide bit linecontacts for connecting the bit lines with the active regions.

The length L9 of the ferroelectric memory cell 908 in the ninthembodiment in the bit line direction satisfies L9=b1+c1.

Since d+e+f>c1/2+b1/2, the following relationship is satisfied.L9=(b1/2+c1/2)+(b1/2+c1/2)<d+e+f+(b1/2+c1/2)=L12 (length of theferroelectric memory cell 28 in the second conventional example in thebit line direction)

Thus, the area of the ferroelectric memory cell 908 in the ninthembodiment can be made smaller than the area of the ferroelectric memorycell 28 in the second conventional example.

1. A ferroelectric memory in which a plurality of memory cells eachhaving a transistor and a ferroelectric capacitor are arranged in amatrix, wherein plate lines run in the word line direction above theferroelectric capacitors of memory cells adjacent to each other in theword line direction among the plurality of memory cells, bit linecontacts each for connecting a bit line and an active region of thetransistor are placed in regions between the plate lines adjacent toeach other in the bit line direction and between the ferroelectriccapacitors adjacent to each other in the word line direction, cutportions are formed at positions of the plate lines near the bit linecontacts, and the active regions of the transistors of the plurality ofmemory cells extend in directions intersecting with the word linedirection and the bit line direction.